Simultaneous measurement of the conduction and valence-band masses in strained-layer structures
Simultaneous measurement of both the conduction and valence-band masses in strained-layer structures is presented. These measurements rely on application of our recent theoretical predictions regarding breaking of the usual selection rules for interband magneto-luminescence transitions in modulation-doped structures. Thus, from a single sample, the dispersion relations for both the conduction and valence-band can be measured and analyzed. Low-temperature (4K) magneto-luminescence data for a representative GaAs/InGaAs/AlGaAs (15% In, Al) n-type 125/angstrom/ single-strained-quantum well structure are presented. We measure zone-center conduction and valence-band effective masses of 0.068m/sub 0/ and 0.10m/sub 0/, respectively. For increasing band energies (40 MeV above the bandgap energy) the conduction-band is parabolic while the valence-band is highly nonparabolic; the valence-band mass increased to about 0.2m/sub 0/ in this energy range. 12 refs., 4 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6724871
- Report Number(s):
- SAND-88-1295; CONF-8809152-1; ON: DE88017349
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
LAYERS
LUMINESCENCE
MAGNETIC FIELDS
MATERIALS
N-TYPE CONDUCTORS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
VALENCE