Determination of energy-band dispersion curves in strained-layer structures

Journal Article · Mon May 29 04:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101367· OSTI ID:6237254

Jones, E D; Lyo, S K; Fritz, I J; Klem, J F; Schirber, J E; Tigges, C P; Drummond, T J

Simultaneous measurement of both the conduction- and valence-band dispersion curves in single strained-layer structures is presented. These measurements rely on the application of recent observations regarding breaking of the usual selection rules for interband magnetoluminescence transitions in modulation-doped structures. Low-temperature magneto-luminescence data for three representative InGaAs/GaAs n-type single-strained quantum well structures are presented. For energies approaching 50 meV above the band gap, we find that the conduction band is parabolic with an effective mass of 0.071m/sub 0/. Over the same energy range, the valence bands are highly nonparabolic.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6237254
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:22; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRONIC STRUCTURE
ENERGY GAP
ENERGY RANGE
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
LUMINESCENCE
MAGNETO-OPTICAL EFFECTS
MEV RANGE
MEV RANGE 10-100
MODULATION
NUMERICAL DATA
PHOTOLUMINESCENCE
PNICTIDES
STRAINS
SUPERLATTICES
VALENCE