Strain and density dependent valence-band masses in InGaAs/GaAs and GaAs/GaAsP strained-layer structures

Conference · Sun Jan 01 04:00:00 EST 1989

OSTI ID:5709380

Jones, E D; Biefeld, R M; Klem, J F; Lyo, S K

Low-temperature magnetoluminescence measurements have been performed in several n-type InGaAs/GaAs single-strained-quantum-wells with varying internal strain and a n-type GaAs/GaAsP strained-layer-superlattice. Using newly discovered selection rules, an analysis of the data yields simultaneous information about the conduction and valence-band dispersion curves from a single sample. We find that the conduction-bands are parabolic for all of our structures, with effective mass in the range of 0.068 to 0.074m/sub 0/. The valence-bands are found to be nonparabolic and strain dependent. A simple two-band model is used to analyze the nonparabolicity in terms of a zone-center mass m and a parameter C which is expressed in terms of the light-hole and heavy-hole energy difference. From the two-band model, predictions for the valence-band mass as a function of the 2D-carrier concentration can be made. These predictions are found to be in good agreement with recent cyclotron resonance measurements of the mass in p-type samples. 10 refs., 6 figs., 1 tab.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5709380
• Report Number(s): SAND-89-1116C; CONF-8909185-1; ON: DE89016882
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BAND THEORY
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LUMINESCENCE
MAGNETIC FIELDS
MATERIALS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
STRAINS
SUPERLATTICES