Optical determinations of energy-band dispersion curves in novel compound semiconductor materials

Conference · Wed Feb 01 04:00:00 EST 1995

OSTI ID:10115141

Jones, E D

We present magnetoluminescence data which provides a quantitative measure of the energy-band dispersion curves of novel compound semiconductor optoelectronic materials. Data for a n-type strained-layer InGaAs/GaAs (quantum-well width {approximately} 8 nm) and a n-type 4.5-nm-wide GaAs/AlGaAs lattice-matched single-quantum well are presented. We find that the -conduction-bands are almost parabolic, with a mass of about 0.068m{sub 0} for InGaAs/GaAs and 0.085m{sub 0} for the GaAs/AlGaAs structure. The valence-bands are nonparabolic with wave vector dependent in-plane valence-band masses varying from about 0.1 m{sub 0} at zone center to about 0.3 m{sub 0} for 20 meV energies.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10115141
• Report Number(s): SAND--95-0094C; CONF-950226--2; ON: DE95006318
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606
ALUMINIUM ARSENIDES
DISPERSION RELATIONS
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
LUMINESCENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
VALENCE