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Functional modeling of the transient radiation response for GaAs thyristors

Conference ·
OSTI ID:6724812
 [1]; ; ;  [2];  [3]
  1. New Mexico Univ., Albuquerque, NM (USA). Center for High Technology Materials
  2. Sandia National Labs., Albuquerque, NM (USA)
  3. New Mexico Univ., Albuquerque, NM (USA). Dept. of Electrical and Computer Engineering
+ Show Author Affiliations

Numerical simulations of the transient response of gallium arsenide (GaAs) thyristors to bursts of ionizing radiation are reported. The device simulator BAMBI 2.0, with incorporated GaAs transport models, was used. Good experimental agreement exists, including effects of carrier lifetime on the radiation response and the phenomena of delayed switching. 13 refs., 8 figs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
DOE/DP
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6724812
Report Number(s):
SAND-90-1924C; CONF-900723--14; ON: DE90015209
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
99 GENERAL AND MISCELLANEOUS
990200 -- Mathematics & Computers
ARSENIC COMPOUNDS
ARSENIDES
B CODES
BALLISTIC MISSILE DEFENSE
COMPARATIVE EVALUATIONS
COMPUTER CODES
COMPUTERIZED SIMULATION
DOPED MATERIALS
DOSE RATES
ELECTRONIC CIRCUITS
EXPLOSIONS
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
LAYERS
MATERIALS
NATIONAL DEFENSE
NUCLEAR EXPLOSIONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
PULSES
RADIATION EFFECTS
RADIATION HARDENING
RECOMBINATION
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
SENSITIVITY
SIMULATION
STANDARDS
SUBSTRATES
SWITCHING CIRCUITS
THYRISTORS
TRANSIENTS
TWO-DIMENSIONAL CALCULATIONS
VULNERABILITY