Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Radiation response of optically-triggered GaAs thyristors

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
DOI:https://doi.org/10.1109/23.45417· OSTI ID:7004288

This paper reports the development of gallium arsenide optically-triggered thyristors that exhibit tolerance to high x-ray dose rates. These two-terminal epitaxial devices feature breakover voltages of 18 V to 38 V with no radiation. They trigger at less than 2 volts with only tenths of mW of laser light, but do not trigger at 2 {times} 10{sup 9} Rad(Si)/s with a bias level as much as 40 to 60 percent of the zero-radiation breakover voltage. When these devices are bombarded with neutrons, the reduced carrier lifetimes result in a decreased sensitivity to triggering by light and ionizing radiation.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
7004288
Report Number(s):
CONF-890723--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 36:6; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English