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Monolithically integrated GaAs thyristor-transistor as a hardened optically-triggered switch

Conference ·
OSTI ID:6311404
; ; ; ;

Optically-triggered thyristors are hardened to high x-ray dose rates by the addition of a monolithically integrated compensating phototransistor. Tests of these devices show that sensitivity to radiation-induced switching is reduced by a factor of ten compared to conventional two-terminal thyristors (to 2 {times} 10{sup 9} Rad (Si)/sec). 3 refs., 5 figs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
DOE/DP
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6311404
Report Number(s):
SAND-90-2371C; CONF-910231--1; ON: DE91000040
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
DOSE RATES
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
IONIZING RADIATIONS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES
TESTING
THYRISTORS
X RADIATION