Simulation of the transient radiation response for GaAs thyristors

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/23.101229· OSTI ID:5878801

Keshavarz, A A ^[1]; Carson, R F; Weaver, H T; Hughes, R C ^[2]; Hawkins, C F ^[3]

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1. New Mexico Univ., Albuquerque, NM (USA). Center for High Technology Materials
2. Sandia National Labs., Albuquerque, NM (USA)
3. New Mexico Univ., Albuquerque, NM (USA). Dept. of Electrical and Computer Engineering

Numerical simulations of the transient response of gallium arsenide (GaAs) thyristors to bursts of ionizing radiation are reported. The device simulator BAMBI 2.0, with incorporated GaAs transport models, was used. Good experimental agreement exists, including effects of carrier lifetime on the radiation response and the phenomena of delayed switching.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5878801
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CORRELATIONS
ELECTRICAL TRANSIENTS
ELECTRONIC CIRCUITS
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZATION
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
SIMULATION
SWITCHING CIRCUITS
THYRISTORS
TRANSIENTS
VOLTAGE DROP