Atomic-scale properties of semiconductor heterostructures probed by scanning tunneling microscopy
- Univ. of California, San Diego, La Jolla, CA (United States). Dept. of Electrical and Computer Engineering
- Sandia National Labs., Albuquerque, NM (United States)
The engineering of advanced semiconductor heterostructure materials and devices requires a detailed understanding of, and control over, the structure and properties of semiconductor materials and devices at the atomic to nanometer scale. Cross-sectional scanning tunneling microscopy has emerged as a unique and powerful method to characterize structural morphology and electronic properties in semiconductor epitaxial layers and device structures at these length scales. The basic experimental techniques in cross-sectional scanning tunneling microscopy are described, and some representative applications to semiconductor heterostructure characterization drawn from recent investigations in the authors laboratory are discussed. Specifically, they describe some recent studies of InP/InAsP and InAsP/InAsSb heterostructures in which nanoscale compositional clustering has been observed and analyzed.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 672113
- Report Number(s):
- SAND--98-1035C; CONF-980604--; ON: DE98005465; BR: DP0102011; CNN: Award ECS 95-01469
- Country of Publication:
- United States
- Language:
- English
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