Nanometer-scale compositional variations in III-V semiconductor heterostructures characterized by scanning tunneling microscopy

Journal Article · Thu Jul 01 04:00:00 EDT 1999 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.581755· OSTI ID:359809

Yu, E T; Zuo, S L; Bi, W G; Tu, C W ^[1]; Allerman, A A; Biefeld, R M ^[2]

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1. Department of Electrical and Computer Engineering, University of California at San Diego, LaJolla, California 92093-0407 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Nanometer-scale compositional structure in InAs{sub x}P{sub 1{minus}x}/InN{sub y}As{sub x}P{sub 1{minus}x{minus}y}//InP heterostructures grown by gas-source molecular beam epitaxy and in InAs{sub 1{minus}x}P{sub x}/InAs{sub 1{minus}y}Sb{sub y}/InAs heterostructures grown by metalorganic chemical vapor deposition has been characterized using cross-sectional scanning tunneling microscopy. InAs{sub x}P{sub 1{minus}x} alloy layers are found to contain As-rich and P-rich clusters with boundaries formed preferentially within ({bar 1}11) and (1{bar 1}1) crystal planes. Similar compositional clustering is observed within InN{sub y}As{sub x}P{sub 1{minus}x{minus}y} alloy layers. Imaging of InAs{sub 1{minus}x}P{sub x}/InAs{sub 1{minus}y}Sb{sub y} superlattices reveals nanometer-scale clustering within both the InAs{sub 1{minus}x}P{sub x} and InAs{sub 1{minus}y}Sb{sub y} alloy layers, with preferential alignment of compositional features in the [{bar 1}12] direction. Instances are observed of compositional features correlated across a heterojunction interface, with regions whose composition corresponds to a smaller unstrained lattice constant relative to the surrounding alloy material appearing to propagate across the interface. {copyright} {ital 1999 American Vacuum Society.}

• OSTI ID: 359809
• Report Number(s): CONF-981126--
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 4 Vol. 17; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
ELECTRON MICROSCOPY
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LATTICE PARAMETERS
SEGREGATION
SUPERLATTICES