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Transmission electron microscopy study of ICB Al on Ge and Si(001) substrates

Conference ·
OSTI ID:6714350
Ionized Cluster Beam (ICB) deposition is a novel technique for the production of thin films with interesting and unusual structures and properties. Its development effort has been spearheaded at Kyoto University, but interest in the technique has become widespread in recent years. At Berkeley, research is underway to characterize and understand the structure of interfaces in such films. Transmission electron microscopy (TEM) is being employed to obtain images of the atomic structure and the defects typical for these materials with the aim of understanding the relationship between deposition conditions and the structural characteristics of such interfaces. A question of fundamental importance in the formation of high-quality films is how the crystal structures of the substrate and the overlayer affect the epitaxial orientation relationship between them. In this study we present a comparison between Al films grown on two different substrates: (001) Si and (001) Ge. The interface structures are characterized in plan view by conventional microscopy using diffraction and moire contrast and in cross section by high resolution microscopy. Thin films of Al grown on (001) Si are found to be distinctly different from Al films grown on (001) Ge substrates. The relationship between interfaces produced by precipitation reactions in Al--Si and Al--Ge alloys.
Research Organization:
Lawrence Berkeley Lab., CA (USA)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6714350
Report Number(s):
LBL-29034; CONF-9006255--1; ON: DE90015299
Country of Publication:
United States
Language:
English