Growth of aluminum nitride thin films on Si(111) and Si(001): Structural characteristics and development of intrinsic stresses

Journal Article · Fri Apr 01 04:00:00 EST 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.356105· OSTI ID:5158012

Meng, W J; Sell, J A; Perry, T A ^[1]; Rehn, L E; Baldo, P M ^[2]

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1. Physics Department, General Motors Research and Development Center, Warren, Michigan 48090 (United States)
2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

We have grown aluminum nitride thin films by ultrahigh vacuum reactive sputter deposition on Si(111) and Si(001) substrates. We show results of film characterization by Raman scattering, ion beam channeling, and transmission electron microscopy, which establish the occurrence of epitaxial growth of wurtzitic aluminum nitride thin films on Si(111) at temperatures above 600 [degree]C. In contrast, microstructural characterization by transmission electron microscopy shows the formation of highly oriented polycrystalline wurtzitic aluminum nitride thin films on Si(001). Real-time substrate curvature measurements reveal the existence of large intrinsic stresses in aluminum nitride thin films grown on both Si(111) and Si(001) substrates.

• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 5158012
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 75:7; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
CHANNELING
DEPOSITION
ELECTRON MICROSCOPY
EPITAXY
FILMS
ION CHANNELING
MICROSCOPY
MICROSTRUCTURE
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
RAMAN SPECTRA
SPECTRA
SPUTTERING
STRESSES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY