Annealing of undoped InP and the evaluation by photoluminescence

Journal Article · Sun Apr 01 04:00:00 EDT 1990 · Journal of the Electrochemical Society; (USA)

DOI:https://doi.org/10.1149/1.2086649· OSTI ID:6712189

Inoue, T; Shimakura, H; Kainosho, K; Oda, O ^[1]; Hirano, R ^[2]

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1. Nippon Mining Co., Ltd., Electronic Materials and Components Research Lab., Niizo-Minami, Toda, Saitama 335 (JP)
2. Nippon Mining Co., Ltd., Semiconductor Materials Dept., Niizo-Minami, Toda, Saitama 335 (JP)

Undoped InP single crystals grown by the LEC technique have been annealed at temperatures between 520{degrees}--820{degrees}C for 5 h and their electrical properties and the photoluminescence spectra have been evaluated. It was found that the carrier concentration can be decreased up to 3 {times} 10{sup 14} cm{sup {minus} 3} by annealing at 620{degrees}C and the photoluminescence spectra are largely changed by annealing. When the annealing temperature is increased to higher than 720{degrees}C, the free exciton peak appears very prominently and many peaks appear at the longer wavelength region between 900 and 980 nm.

• OSTI ID: 6712189
• Journal Information: Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 137:4; ISSN JESOA; ISSN 0013-4651
• Country of Publication: United States
• Language: English

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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CARRIER DENSITY
CRYSTALS
ELECTRICAL PROPERTIES
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LUMINESCENCE
MONOCRYSTALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES