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Time-resolved photoluminescence of undoped InP

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.355962· OSTI ID:5045218
; ;  [1]; ;  [2]; ;  [3]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  2. Naval Research Laboratory, Washington, D. C. 20375 (United States)
  3. AT T Microelectronics Laboratory, Reading, Pennsylvania 19612 (United States)
Energy and time-resolved photoluminescence data have been obtained for nominally undoped ([ital n] 4.5[times]10[sup 15] cm[sup [minus]3]) bulk InP grown by the vertical-gradient freeze method. The data were taken as a function of temperature, from 80 to 290 K, and analyzed using a solution to the continuity equation. The resulting lifetime values range from 300 ns to 3.2 [mu]s, and surface recombination velocities were fund to be on the order of 10[sup 3] cm/s. The temperature dependence can be explained by assuming a radiatively limited recombination with a resulting [ital B] coefficient [ge]5.9[times]10[sup [minus]11] cm[sup 3]/s at 300 K.
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5045218
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 75:8; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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