Optimized conditions for the formation of buried insulating layers in Si by high dose implantation of oxygen
Results are presented detailing the dependence of the residual damage on substrate temperature and dose for high dose implantation of oxygen in Si. It has been previously demonstrated that a buried oxide layer can be formed by this method. However, the usefulness of this silicon on insulator (SOI) structure has been limited by the considerable damage which accumulates in the crystal overlayer during irradiation. Much of the damage remains even after high temperature annealing. It is shown that the quality of the crystalline layer depends critically on the implant conditions. The preservation of the crystal quality of this layer by implanting at high temperatures to prevent defect clustering competes with the adverse effects caused by rapid diffusion of oxygen into this region. This leads to a rather narrow range of temperature over which optimization occurs. Rutherford backscattering/channeling spectroscopy and cross-sectional, transmission electron microscopy were used for analyzing the samples and for understanding the phenomena of formation of buried insulating layers.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6703551
- Report Number(s):
- CONF-840768-2; ON: DE84015369
- Resource Relation:
- Conference: Effects of modes of formation on the structure of glass meeting, Nashville, TN, USA, 9 Jul 1984; Other Information: Portions are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
Similar Records
Buried insulator formation in silicon by ion implantation: A review
Characterization and optimization of structural defects in buried oxide materials formed by high-dose oxygen implantation in silicon
Related Subjects
SILICON
ION IMPLANTATION
KEV RANGE 100-1000
MICROSTRUCTURE
OXYGEN IONS
RUTHERFORD SCATTERING
TRANSMISSION ELECTRON MICROSCOPY
CHARGED PARTICLES
CRYSTAL STRUCTURE
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
IONS
KEV RANGE
MICROSCOPY
SCATTERING
SEMIMETALS
360605* - Materials- Radiation Effects