Formation of subsurface Al/sub 2/O/sub 3/ layers in aluminum by oxygen ion implantation

Conference · Fri Jul 27 04:00:00 EDT 1984

OSTI ID:6685169

Musket, R G; Brown, D W; Hayden, H C

The use of high-dose oxygen ion implants to create buried, insulating SiO/sub 2/ layers in silicon has been reported by many groups. In contrast, only a few groups have studied ion-implanted oxide layers on and in aluminum films. We have investigated the formation of subsurface Al/sub 2/O/sub 3/ layers in bulk, polycrystalline aluminum. In particular, we implanted 1 to 16 x 10/sup 17/ atoms cm/sup -2/ using low current densities of 180 keV O/sub 2//sup +/ near room temperature. Depth distributions of oxygen and aluminum were determined using both Auger-electron spectroscopy combined with argon-ion sputtering and helium-ion backscattering. For oxygen fluences greater than about 8 x 10/sup 17/ atoms cm/sup -2/ our analyses revealed subsurface layers of Al/sub 2/O/sub 3/ were formed with thicknesses that increased with implanted dose. We combined our results with those from the aluminum literature to propose a formation process.

• Research Organization: Lawrence Livermore National Lab., CA (USA); California Univ., Davis (USA). Dept. of Applied Science; Connecticut Univ., Storrs (USA)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6685169
• Report Number(s): UCRL-90479; CONF-840760-8; ON: DE84015599
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360105 -- Metals & Alloys-- Corrosion & Erosion
360106* -- Metals & Alloys-- Radiation Effects
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
AUGER ELECTRON SPECTROSCOPY
CHALCOGENIDES
CHARGED PARTICLES
DEPTH
DIMENSIONS
DISTRIBUTION
ELECTRON SPECTROSCOPY
ELEMENTS
ION IMPLANTATION
IONS
LAYERS
METALS
OXIDES
OXYGEN COMPOUNDS
OXYGEN IONS
PRODUCTION
SPATIAL DISTRIBUTION
SPECTROSCOPY