Formation of a nearly pure aluminum layer in beryllium using ion implantation

Journal Article · Mon Jan 23 04:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100977· OSTI ID:6623204

Brown, D W; Musket, R G; Munir, Z A

A nearly pure subsurface layer of an implanted element was created using aluminum implantation into beryllium. In particular, post-implant annealing of polycrystalline beryllium samples implanted with 200 keV aluminum caused a dramatic increase in the peak aluminum concentration as determined by Rutherford backscattering. The effect was observed for all three doses studied: 0.46, 1.1, and 4.6 x 10/sup 18/ Al/cm/sup 2/ . For the 1.1 x 10/sup 18/ Al/cm/sup 2/ case, cross-sectional transmission electron microscopy of the annealed sample revealed a distinct subsurface layer with the structure of crystalline aluminum. Auger sputter profiles of individual grains showed the layer purity to be as high as 98 at. % aluminum. However, there were indications that the layer formation and/or purity were grain dependent.

• Research Organization: University of California, Davis, California 95616
• OSTI ID: 6623204
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
ALKALINE EARTH METALS
ALUMINIUM
AUGER ELECTRON SPECTROSCOPY
BACKSCATTERING
BERYLLIUM
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY RANGE
FILMS
GRAIN SIZE
IMPURITIES
ION IMPLANTATION
KEV RANGE
KEV RANGE 100-1000
LAYERS
METALS
MICROSCOPY
MICROSTRUCTURE
SCATTERING
SIZE
SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY