Buried monocrystalline aluminum layers in beryllium using ion implantation

Journal Article · Mon Dec 17 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103793· OSTI ID:6004996

Brown, D W ^[1]; Musket, R G ^[2]; Munir, Z A ^[1]

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1. University of California, Davis, CA (USA)
2. Lawrence Livermore National Laboratory, Livermore, CA (USA)

A buried monocrystalline aluminum layer was formed in (10{bar 1}0) beryllium by implanting 200 keV Al{sup +} to a dose of 1.1{times}10{sup 18} Al/cm{sup 2} and subsequently annealing the implanted beryllium at 500 {degree}C for 1 h. Rutherford backscattering showed layer formation was critically dependent on aluminum dose. Electron microscopy revealed a correlation between this critical dependence and the dose dependence of the density of columnar beryllium defects extending through the aluminum layers from the beryllium overlayer to the beryllium bulk. Several common features found between the formation of this elemental layer and formation of buried compound layers strongly suggest that similar precipitate coarsening behavior is responsible for both.

• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6004996
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:25; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
ALKALINE EARTH METALS
ALUMINIUM
ALUMINIUM IONS
ANNEALING
BACKSCATTERING
BERYLLIUM
CHARGED PARTICLES
CRYSTALS
DATA
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
EXPERIMENTAL DATA
HEAT TREATMENTS
HIGH TEMPERATURE
INFORMATION
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
LAYERS
METALS
MICROSCOPY
MONOCRYSTALS
NUMERICAL DATA
SCATTERING
VERY HIGH TEMPERATURE