The formation of Al{sub 2}O{sub 3}/V{sub 2}O{sub 3} multilayer structures by high-dose ion implantation
- Oak Ridge National Lab., TN (United States). Solid State Div.
- Brown Univ., Providence, RI (United States)
High-resolution TEM, RBS-channeling and x-ray-diffraction techniques have been used to characterize multilayered structures formed by the high-dose co-implantation of vanadium and oxygen into single crystals of {alpha}-Al{sub 2}O{sub 3}. Thin, two-dimensional multilayered structures have been formed by implanting c-axis and a-axis-oriented single crystals of Al{sub 2}O{sub 3} at room temperature with vanadium (10{sup 17} ions/cm{sup 2} at 300 keV) and oxygen (2 x 10{sup 17} ions/cm{sup 2}, 120 keV) followed by a rapid anneal at 1,000 C. Cross-sectional TEM studies showed that this process produced a buried layer of V{sub 2}O{sub 3} located about 120 nm below the Al{sub 2}O{sub 3} surface. X-ray-diffraction investigations revealed that this layer is epitaxially oriented in three dimensions with respect to the host Al{sub 2}O{sub 3} lattice. The orientational relationship was subsequently confirmed by RBS/channeling techniques. V{sub 2}O{sub 3} exhibits a first-order phase transition at about 155 K that is accompanied by striking changes in its electrical and optical properties, and this phase transition was observed through in-situ TEM cooling studies of cross-sectional samples.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 102253
- Report Number(s):
- CONF-950412--48; ON: DE95017438
- Country of Publication:
- United States
- Language:
- English
Similar Records
Microstructural and chemical effects in Al sub 2 O sub 3 implanted with iron at room temperature and annealed in oxidizing or reducing atmospheres
Coherent V{sub 2}O{sub 3} precipitates in {alpha}-Al{sub 2}O{sub 3} co-implanted with vanadium and oxygen
The effect of crystal orientation on damage accumulation in chromium-implanted Al sub 2 O sub 3
Journal Article
·
Tue Oct 01 00:00:00 EDT 1991
· Journal of Materials Research; (United States)
·
OSTI ID:5162421
Coherent V{sub 2}O{sub 3} precipitates in {alpha}-Al{sub 2}O{sub 3} co-implanted with vanadium and oxygen
Technical Report
·
Fri Dec 30 23:00:00 EST 1994
·
OSTI ID:28366
The effect of crystal orientation on damage accumulation in chromium-implanted Al sub 2 O sub 3
Conference
·
Sun Dec 31 23:00:00 EST 1989
·
OSTI ID:6784647