Valence band discontinuity at the ZnTe/CdTe interface: Making ohmic contact to [ital P]-type CdTe

Conference · Tue Dec 01 04:00:00 EST 1992 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:6683914

Niles, D W ^[1]; Hoechst, H; Rioux, D ^[2]

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1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
2. Synchrotron Radiation Center, 3731 Schneider Drive, Stoughton, Wisconsin 53589 (United States)

We studied the growth and electronic structure of the ZnTe/CdTe(100) interface with angle-resolved synchrotron radiation photoemission (ARPES) and reflection high energy electron diffraction (RHEED). RHEED patterns during the growth of ZnTe layers on the CdTe(100) substrate showed that the initial [similar to]16 A grows in registry. After this pseudomorphic 16 A layer, the next 120 A grows with defects to relieve the 6.6% strain between ZnTe and CdTe. After [similar to]140 A, the ZnTe layers are relaxed. ARPES taken near the Brillouin zone center gave a valance band offset [Delta][ital E][sub [ital v]]=0.14 eV, with the ZnTe valence band maximum (VBM) higher than the CdTe VBM.

• OSTI ID: 6683914
• Report Number(s): CONF-9205115--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 268:1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CRYSTAL GROWTH
ELECTRONIC STRUCTURE
EMISSION
HETEROJUNCTIONS
INTERFACES
JUNCTIONS
PHOTOEMISSION
PHOTOVOLTAIC EFFECT
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
ZINC TELLURIDES