Formation and optical properties of CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates

Journal Article · Thu Nov 15 04:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2812557· OSTI ID:21064444

Lee, H S; Park, H L; Lee, I; Kim, T W ^[1]

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1. Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)

Atomic force microscopy (AFM) and photoluminescence (PL) measurements were carried out to investigate the formation and the optical properties of CdTe/ZnTe nanostructures with various CdTe thicknesses grown on Si (100) substrates by using molecular beam epitaxy and atomic layer epitaxy. AFM images showed that uniform CdTe/ZnTe quantum dots with a CdTe layer thickness of 2.5 ML (monolayer) were formed on Si (100) substrates. The excitonic peaks corresponding to transitions from the ground electronic subband to the ground heavy-hole band in the CdTe/ZnTe nanostructures shifted to a lower energy with increasing thickness of the CdTe layer. The activation energies of the carriers confined in the CdTe/ZnTe nanostructures grown on Si (100) substrates were obtained from the temperature-dependent PL spectra. The present observations can help improve understanding of the formation and the optical properties in CdTe/ZnTe nanostructures with different CdTe thicknesses grown on Si (100) substrates.

• OSTI ID: 21064444
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ATOMIC FORCE MICROSCOPY
CADMIUM TELLURIDES
CRYSTAL GROWTH
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE
THICKNESS
ZINC TELLURIDES