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U.S. Department of Energy
Office of Scientific and Technical Information

Process feasibility study in support of silicon material, Task I. Quarterly technical progress report (XI)

Technical Report ·
DOI:https://doi.org/10.2172/6678641· OSTI ID:6678641
Major activities focused on process system properties, chemical engineering and economic analyses during this reporting period. Analysis of process system properties was continued for silicon source materials. Primary efforts centered on data collection, analysis, estimation and correlation. Property data for silicon tetrachloride are reported for critical constants (temperature, pressure, volume, compressibility factor); vapor pressure; heat of vaporization; gas heat capacity and liquid heat capacity. Silicon tetrachloride is the source material in several processes under consideration for solar cell grade silicon production. Final experimental values for gas phase thermal conductivity of the silicon source materials silane, dichlorosilane, trichlorosilane, tetrachlorosilane, and tetrafluorosilane are reported in the temperature range 25 to 350/sup 0/C. These final values reflect a refinement of previously reported preliminary values after complete calibration of the temperature measuring apparatus. Chemical engineering analysis of the Union Carbide silane process (Case C-Revised Process) was continued with primary efforts being devoted to the preliminary process design. Status and progress are reported for base case conditions, process flow diagram, reaction chemistry and equipment design. Current engineering design is in progress for the several distillation columns which separate the liquid chlorosilanes and provide purified silane product.
Research Organization:
Lamar Univ., Beaumont, TX (USA). Dept. of Chemical Engineering
DOE Contract Number:
NAS-7-100-954343
OSTI ID:
6678641
Report Number(s):
DOE/JPL/954343-11
Country of Publication:
United States
Language:
English