Process feasibility study in support of silicon material, Task I. Quarterly technical progress report (XI)
Major activities focused on process system properties, chemical engineering and economic analyses during this reporting period. Analysis of process system properties was continued for silicon source materials. Primary efforts centered on data collection, analysis, estimation and correlation. Property data for silicon tetrachloride are reported for critical constants (temperature, pressure, volume, compressibility factor); vapor pressure; heat of vaporization; gas heat capacity and liquid heat capacity. Silicon tetrachloride is the source material in several processes under consideration for solar cell grade silicon production. Final experimental values for gas phase thermal conductivity of the silicon source materials silane, dichlorosilane, trichlorosilane, tetrachlorosilane, and tetrafluorosilane are reported in the temperature range 25 to 350/sup 0/C. These final values reflect a refinement of previously reported preliminary values after complete calibration of the temperature measuring apparatus. Chemical engineering analysis of the Union Carbide silane process (Case C-Revised Process) was continued with primary efforts being devoted to the preliminary process design. Status and progress are reported for base case conditions, process flow diagram, reaction chemistry and equipment design. Current engineering design is in progress for the several distillation columns which separate the liquid chlorosilanes and provide purified silane product.
- Research Organization:
- Lamar Univ., Beaumont, TX (USA). Dept. of Chemical Engineering
- DOE Contract Number:
- NAS-7-100-954343
- OSTI ID:
- 6678641
- Report Number(s):
- DOE/JPL/954343-11
- Country of Publication:
- United States
- Language:
- English
Similar Records
Process feasibility study in support of silicon material, Task I. Quarterly technical progress report (IX)
Process feasibility study in support of silicon material Task I. Final report, October 1, 1975-February 6, 1981
Gaseous thermal conductivity of silane, dichlorosilane, trichlorosilane, tetrachlorosilane, and tetrafluorosilane in the temperature range from 28 to 350 C
Technical Report
·
Wed Nov 30 23:00:00 EST 1977
·
OSTI ID:5064386
Process feasibility study in support of silicon material Task I. Final report, October 1, 1975-February 6, 1981
Technical Report
·
Thu Feb 05 23:00:00 EST 1981
·
OSTI ID:6668149
Gaseous thermal conductivity of silane, dichlorosilane, trichlorosilane, tetrachlorosilane, and tetrafluorosilane in the temperature range from 28 to 350 C
Journal Article
·
· Journal of Chemical and Engineering Data; (United States)
·
OSTI ID:6539941
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
CHLORIDES
CHLORINE COMPOUNDS
DISTILLATION
ECONOMIC ANALYSIS
ECONOMICS
ELEMENTS
ENTHALPY
FLUIDS
GASES
HALIDES
HALOGEN COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
MANUFACTURING
PHYSICAL PROPERTIES
PROCESSING
PRODUCTION
PURIFICATION
SEMIMETALS
SEPARATION PROCESSES
SILANES
SILICON
SILICON CHLORIDES
SILICON COMPOUNDS
SPECIFIC HEAT
THERMAL CONDUCTIVITY
THERMODYNAMIC PROPERTIES
TRANSITION HEAT
VAPOR PRESSURE
VAPORIZATION HEAT
VAPORS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
CHLORIDES
CHLORINE COMPOUNDS
DISTILLATION
ECONOMIC ANALYSIS
ECONOMICS
ELEMENTS
ENTHALPY
FLUIDS
GASES
HALIDES
HALOGEN COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
MANUFACTURING
PHYSICAL PROPERTIES
PROCESSING
PRODUCTION
PURIFICATION
SEMIMETALS
SEPARATION PROCESSES
SILANES
SILICON
SILICON CHLORIDES
SILICON COMPOUNDS
SPECIFIC HEAT
THERMAL CONDUCTIVITY
THERMODYNAMIC PROPERTIES
TRANSITION HEAT
VAPOR PRESSURE
VAPORIZATION HEAT
VAPORS