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U.S. Department of Energy
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Development of copper sulfide/cadmium sulfide thin-film solar cells. Twelfth technical progress report, April 1, 1982 to June 30, 1982

Technical Report ·
OSTI ID:6676063
Among the major accomplishments during this period have been the characterization of effects on cell performance due to ion implantation and to laser-annealing treatments. The combination of initial laser treatment and furnace annealing reduced the difference in space-charge field associated with the upper and lower branches of the photovoltaic response curves (ln J/sub SC/ vs. V/sub OC/). The change in the lower branch behavior should lead to improved fill factor. For the upper branch behavior, the effect was to increase opposing current and reduce open-circuit voltage capability. After succeeding laser treatments, the open-circuit voltage for excitation near AMl was restored as the opposing current pre-exponential factor was reduced. Short-circuit current loss was noted for both implantation and laser treatments, with differences depending on the kind of treatment. Implantation of either /sup 24/Mg/sup +/ or /sup 22/Ne/sup +/, without subsequent treatment, caused reductions in short-circuit current density, probably because of reductions in minority carrier diffusion length due to implantation damage. With laser treatment of an experimental cell, the loss in short-circuit current increased with decreasing J/sub SC/. This was probably due to a change in heterojunction collection efficiency related to the photomodulation of traps, not involved in the tunneling control of opposing current. Laser treatment suppressed an excess photocurrent which was present when a Kodak Type 96 N. D. 1 filter was used to characterize cells after furnace anneals.
Research Organization:
Westinghouse Research and Development Center, Pittsburgh, PA (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6676063
Report Number(s):
SERI/PR-8143-1-T11; ON: DE83004077
Country of Publication:
United States
Language:
English