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Silicon solar cells fabricated by ion implantation and laser annealing

Journal Article · · J. Appl. Phys.; (United States)
Silicon solar cells are fabricated using ion implantation and laser annealing. An AM1 conversion efficiency of 10.5% was obtained without an anti-reflection coating for a cell ion-implanted with 4 x 10/sup 15/ protons/cm/sup 2/ at 25 keV and laser annealed using a W-switched ruby laser. This efficiency increases after low-temperature furnace annealing as a result of an increase in the open-circuit voltage (V/sub oc/) and the fill factor. The dependence of V/sub oc/ on the furnace annealing temperature was examined by diode-characteristic measurements and deep-level transient spectroscopy. The fact that V/sub oc/ increases and the diode reverse-current density decreases as the furnace annealing-temperature increases is related to the decrease in the number of residual defects near the junction. 8 references.
Research Organization:
Hitachi, Ltd., Tokyo, Japan
OSTI ID:
5805008
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 19; ISSN JAPIA
Country of Publication:
United States
Language:
English