Substrate heating and emitter dopant effects in laser-annealed solar cells

Journal Article · Sat Aug 15 04:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92704· OSTI ID:6407842

Young, R T; Wood, R F; Christie, W H; Jellison, Jr, G E

This letter provides the first experimental evidence that substrate heating during pulsed-laser annealing (PLA) of ion-implanted silicon can significantly improve the electrical properties of the laser recrystalized region due to the reduction of the regrowth velocity. It is also shown that by using the optimum PLA condition, the open-circuit voltage V/sub OC/ and the fill factor of ion-implanted, laser-annealed solar cells are improved by increasing the emitter dopant concentrations, whereas the short-circuit current J/sub SC/ remains fairly constant, results which are in qualitative agreement with theoretical predictions.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6407842
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
BORON
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH METHODS
CZOCHRALSKI METHOD
DATA
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
HEATING
INFORMATION
ION IMPLANTATION
LASER-RADIATION HEATING
MATERIALS
MATHEMATICAL MODELS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PLASMA HEATING
PULSES
QUANTITY RATIO
RECRYSTALLIZATION
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
THEORETICAL DATA