Ferromagnetic thin films

Patent · Tue Dec 20 00:00:00 EST 1994

OSTI ID:6661588

Krishnan, K M

A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

• DOE Contract Number: AC03-76SF00098
• Assignee: University of California, Oakland, CA (United States)
• Patent Number(s): US 5374472; A
• Application Number: PPN: US 8-177644
• OSTI ID: 6661588
• Resource Relation: Patent File Date: 4 Jan 1994
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPOSITE MATERIALS
FABRICATION
MAGNETIC PROPERTIES
FERROMAGNETIC MATERIALS
GALLIUM ALLOYS
GALLIUM ARSENIDES
MANGANESE ALLOYS
LAYERS
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
MAGNETIC MATERIALS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
360601* - Other Materials- Preparation & Manufacture
360606 - Other Materials- Physical Properties- (1992-)