Ferromagnetic thin films

Patent · Mon Dec 19 23:00:00 EST 1994

OSTI ID:6661588

Krishnan, K M

A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

• DOE Contract Number: AC03-76SF00098
• Assignee: University of California, Oakland, CA (United States)
• Patent Number(s): A; US 5374472
• Application Number: PPN: US 8-177644
• OSTI ID: 6661588
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360606 -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
COMPOSITE MATERIALS
FABRICATION
FERROMAGNETIC MATERIALS
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
MAGNETIC MATERIALS
MAGNETIC PROPERTIES
MANGANESE ALLOYS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES