Visible diode laser
A semiconductor laser is described, comprising: (a) a semiconductor substrate; and (b) a plurality of semiconductor layers, positioned upon said semiconductor substrate, comprising: (1) a quantum well region comprised of Ga[sub y]In[sub 1[minus]y]P for propagating optical signals along an axis of propagation, said quantum well region having a PN junction proximate thereto, and wherein said quantum well region is formed to be strained relative to layers disposed adjacent thereto; (2) a first graded index layer comprised of (Al[sub x]Ga[sub 1[minus]x])O.51In[sub 0.49]P having a graded index of refraction disposed adjacent a first side of said quantum well region, said graded index of refraction being largest at the interface of said first graded index layer and said quantum well region and decreasing in a direction away from said quantum well region; and (3) a second graded index layer comprised of (Al[sub x[minus]] Gal[sub 1[minus]x])[sub 0.51]In[sub 0.49]P having a graded index of refraction disposed adjacent a second side of said quantum well region, said graded index of refraction being largest at the interface of said second graded index layer and said quantum well region and decreasing in a direction away from said quantum well region.
- Assignee:
- McDonnell Douglas Corp., St. Louis, MO (United States)
- Patent Number(s):
- A; US 5218613
- Application Number:
- PPN: US 7-877152
- OSTI ID:
- 6455377
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426002* -- Engineering-- Lasers & Masers-- (1990-)
DESIGN
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MATERIALS
P-N JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
SUBSTRATES