Ferromagnetic thin films
Patent
·
OSTI ID:869657
- Berkeley, CA
A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- Regents, University of California (Oakland, CA)
- Patent Number(s):
- US 5374472
- OSTI ID:
- 869657
- Country of Publication:
- United States
- Language:
- English
Magnetic Tetragonal δ Phase in the Mn–Ga Binary
|
journal | April 1965 |
Magnetic and magneto‐optic properties of epitaxial ferromagnetic τ‐MnAl/(Al,Ga)As heterostructures
|
journal | March 1992 |
Epitaxial ferromagnetic τ‐MnAl films on GaAs
|
journal | December 1990 |
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