Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

Patent · Tue Mar 17 00:00:00 EST 1987

OSTI ID:6655674

Wanlass, M

A reactor vessel is described for chemical vapor deposition of a uniform semiconductor film on a substrate, comprising: a generally cylindrical reaction chamber for receiving a substrate and a flow of reaction gas capable of depositing a film on the substrate under the conditions of the chamber, the chamber having upper and lower portion and being oriented about a vertical axis; a supporting means having a substrate support surface generally perpendicular to the vertical axis for carrying the substrate within the lower portion of the reaction chamber in a predetermined relative position with respect to the upper portion of the reaction chamber, the upper portion including a cylindrically shaped confinement chamber. The confinement chamber has a smaller diameter than the lower portion of the reaction chamber and is positioned above the substrate support surface; and a means for introducing a reaction gas into the confinement chamber in a nonaxial direction so as to direct the reaction gas into the lower portion of the reaction chamber with a non-axial flow having a rotational component with respect to the vertical axis. In this way the reaction gas defines an inward vortex flow pattern with respect to the substrate surface.

• Assignee: Dept. of Energy, Washington, DC
• Patent Number(s): US 4649859
• OSTI ID: 6655674
• Resource Relation: Patent File Date: Filed date 19 Feb 1985
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CHEMICAL REACTORS
SEMICONDUCTOR MATERIALS
FILMS
GAS FLOW
ORIENTATION
POSITIONING
ROTATION
SUBSTRATES
SUPPORTS
VORTEX FLOW
CHEMICAL COATING
DEPOSITION
FLUID FLOW
MATERIALS
MECHANICAL STRUCTURES
MOTION
SURFACE COATING
360601* - Other Materials- Preparation & Manufacture