Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.
- Research Organization:
- Solar Energy Research Inst. (SERI), Golden, CO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Dept. of Energy
- Application Number:
- ON: DE85017804
- OSTI ID:
- 5273619
- Country of Publication:
- United States
- Language:
- English
Similar Records
Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
Burning cell for solid waste fuel materials
Related Subjects
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
SEMICONDUCTOR MATERIALS
CRYSTAL GROWTH
DESIGN
FILMS
HELICAL CONFIGURATION
QUARTZ
CHALCOGENIDES
CHEMICAL COATING
CONFIGURATION
DEPOSITION
MATERIALS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
SILICON OXIDES
SURFACE COATING
360601* - Other Materials- Preparation & Manufacture