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Title: Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

Abstract

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Inventors:
 [1]
  1. Golden, CO
Publication Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
866179
Patent Number(s):
US 4649859
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
reactor; design; uniform; chemical; vapor; deposition-grown; films; substrate; rotation; quartz; vessel; growth; semiconductor; vertical; cylindrical; reaction; chamber; substrate-supporting; pedestal; provides; horizontal; surface; spaced; perimeter; wall; confinement; diameter; disposed; coaxially; receives; gas; injected; tangent; inside; forming; helical; stream; descends; edge; separation; flow; diverting; inwardly; spiraling; vortex; reactor design; semiconductor film; confinement chamber; supporting surface; reaction gas; chemical vapor; reaction chamber; reactor vessel; gas stream; vapor deposition; chamber wall; semiconductor films; surface spaced; disposed coaxially; horizontal surface; gas injected; uniform semiconductor; uniform chemical; pedestal provide; quartz reactor; /118/

Citation Formats

Wanlass, Mark. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation. United States: N. p., 1987. Web.
Wanlass, Mark. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation. United States.
Wanlass, Mark. Thu . "Reactor design for uniform chemical vapor deposition-grown films without substrate rotation". United States. https://www.osti.gov/servlets/purl/866179.
@article{osti_866179,
title = {Reactor design for uniform chemical vapor deposition-grown films without substrate rotation},
author = {Wanlass, Mark},
abstractNote = {A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.},
doi = {},
url = {https://www.osti.gov/biblio/866179}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1987},
month = {1}
}

Patent:

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