Interface structures during solid-phase-epitaxial growth in ion implanted semiconductors and a crystallization model

Journal Article · Wed Dec 01 04:00:00 EST 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.330457· OSTI ID:6649889

Narayan, J

We have investigated the interface structures during solid-phase-epitaxial (SPE) growth in ion implanted silicon and gallium arsenide using high-resolution, cross-section electron microscopy. The crystalline amorphous (c-a) interface during solid-phase-epitaxial growth on )001) faces in silicon was found to be planar with undulations of approx.5 A over 200--500 A intervals. However, above certain dopant concentrations that were much higher than the solubility limits, the SPE growth was completely halted, and the c-a interface was observed to become unstable by developing large undulations that resulted in the formation of twins. The solid-phase-epitaxial growth on )111) faces in Si contained atomically smooth interfaces at first. This was followed by the formation of twins. However, the growth on )001) faces of GaAs was found always to be accompanied by the formation of twins. A model of crystal growth in diamond cubic lattices is presented, which can account for the orientation dependence of SPE growth rates, the nature of interfacial instability, and the formation of twins during SPE growth in Si and GaAs.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6649889
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALLIZATION
CUBIC LATTICES
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
ION IMPLANTATION
MATERIALS
MATHEMATICAL MODELS
MICROSCOPY
ORIENTATION
PHASE TRANSFORMATIONS
PNICTIDES
QUANTITY RATIO
RESOLUTION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SOLIDS
TWINNING