Kinetics of solid-phase crystallization in ion-implanted and deposited amorphous-silicon films

Conference · Sat Jan 01 04:00:00 EST 1983

OSTI ID:5945567

Olson, G L; Roth, J A; Hess, L D; Narayan, J

Epitaxial growth kinetics in ion-implanted and UHV-deposited amorphous-silicon films on Si (100) substrates is reviewed. Crystallization kinetics are measured during laser heating, and microstructural changes are investigated. From 475/sup 0/C to 1350/sup 0/C and rates from .01 A/sec to 10/sup 8/ A/sec, solid-phase epitaxy (SPE) is well described by an Arrhenius expression. Kinetics parameters are determined for intrinsic SPE in self-implanted and UHV-deposited amorphous films; deviations from intrinsic behavior caused by the addition of B, P, F, and As are studied as a function of interface position from 500 to 1000/sup 0/C. Effects of dopant compensation, temperature-dependent kinetic competition between SPE and precipitate formation in asenic-implanted films, and the combined effects of rate retarding (F) and rate-enhancing (B) impurities are reported. Finally, SPE rates in excess of 10/sup 8/ A/sec above 1350/sup 0/C are discussed with respect to a proposed depression in the Si(a) melting temperature. Comparison of kinetics with transition-state predictions imply that T/sub m/(a) < T/sub m/(c); however, the results strongly suggest that in cw laser-heating experiments, the transition from S(a) ..-->.. Si(c) is kinetically favored over the two-step Si(a) ..-->.. Si(l) ..-->.. Si(c) transition between T/sub m/(a) and T/sub m/(c).

• Research Organization: Hughes Research Labs., Malibu, CA (USA); Oak Ridge National Lab., TN (USA)
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5945567
• Report Number(s): CONF-8306102-1; ON: DE83015499
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure &amp; Phase Studies
ALLOYS
AMORPHOUS STATE
ARSENIC ADDITIONS
ARSENIC ALLOYS
BORON ADDITIONS
BORON ALLOYS
CRYSTALLIZATION
ELEMENTS
EPITAXY
FILMS
FLUORINE ADDITIONS
HEATING
ION IMPLANTATION
KINETICS
LASER-RADIATION HEATING
PHASE TRANSFORMATIONS
PHOSPHORUS ADDITIONS
PLASMA HEATING
SEMIMETALS
SILICON