Tunable cw emission in the 1. 3. mu. range from a GaInPAs/InP heterolaser with an external dispersive resonator

Journal Article · Thu Jul 01 04:00:00 EDT 1982 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1982v012n07ABEH005721· OSTI ID:6644144

Bogatov, A P; Vasil'ev, M G; Eliseev, P G; Okhotnikov, O G; Pak, G T; Rakhval'skii, M P; Khairetdinov, K A; Chernousov, N P; Shveikin, V I

A study was made of cw tunable emission from a GaInPAs/InP semiconductor laser with an external resonator. Continuously tunable narrow-band emission in the region of 1.3 ..mu.. was obtained and the output power was up to 4 mW. The tuning range was 24 nm at half-maximum of the output power.

• Research Organization: P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow
• OSTI ID: 6644144
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 12:7; ISSN SJQEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
FREQUENCY SELECTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
LASER RADIATION
LASERS
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
POWER RANGE MILLI W
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TUNING