Fabrication and investigation of GaInPAs/InP heterolasers

Journal Article · Wed Dec 01 04:00:00 EST 1982 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1982v012n12ABEH006284· OSTI ID:6156236

Akhmedov, D; Ismailov, I; Shokhudzhaev, N

Details of the method of fabricating GaInPAs/InP heterolasers emitting at the approx.1550 nm wavelength are given and results of an investigation of the threshold, spectral, and other characteristics of heterolasers in the 1000--1590 nm range are presented. A correlation is established between the threshold characteristics and the photon energy for GaInPAs/InP heterolasers. From the radiation spectrum and the results of x-ray microanalysis it is established that at the boundaries of the Ga/sub x/In/sub 1-x/P/sub 1-y/As/sub y//InP (x = 0.09, y = 0.2) heterojunctions there is a transition layer of variable composition which strongly influences the threshold current densities.

• Research Organization: S. U. Umaraov Physicotechnical Institute, Academy of Sciences of the Tadzhik SSR, Dushanbe
• OSTI ID: 6156236
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 12:12; ISSN SJQEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
CURRENT DENSITY
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EMISSION SPECTRA
ENERGY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
JUNCTIONS
LASER RADIATION
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SPECTRA
THRESHOLD CURRENT
THRESHOLD ENERGY