Direction heterolasers based on GaInPAs/InP
Journal Article
·
· J. Sov. Laser Res.; (United States)
Results are presented of investigations of the isoperiodic system GaInPAs/InP and of heterolasers on its basis. Schemes are presented for interpolation of the basic band parameters and of the refractive index of the GaInPAs solid solution, which is isoperiodic with InP. Optimal methods of growing heterostructures based on the solid solution GaInPAs by the method of heterophase epitaxy are determined. The temperature dependence of the threshold current in heterolasers based on the system GaInPAs/InP is investigated in the wavelength range 1-1.7 ..mu..m. The emitting properties of lasers on this basis are studied. A new type of planar laser is developed, namely a buried mesa-planar laser GaInPaAs/InP heterostructure grown on a p-type substrate and emitting at a wavelength 1.3 ..mu..m. These lasers are characterized by a low level of threshold current at room temperature (down to 30 mA for the better samples), and linearity of the current-voltage characteristics and of the single-mode lasing regime, when working in the cw mode, is preserved up to appreciable excess above the threshold current.
- OSTI ID:
- 6483491
- Journal Information:
- J. Sov. Laser Res.; (United States), Journal Name: J. Sov. Laser Res.; (United States) Vol. 5:3; ISSN JSLRD
- Country of Publication:
- United States
- Language:
- English
Similar Records
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Journal Article
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DISPERSIONS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MATERIALS
MIXTURES
OPTICAL PROPERTIES
OPTIMIZATION
P-TYPE CONDUCTORS
PERFORMANCE TESTING
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SOLID SOLUTIONS
SOLUTIONS
TESTING
WAVELENGTHS
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DISPERSIONS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MATERIALS
MIXTURES
OPTICAL PROPERTIES
OPTIMIZATION
P-TYPE CONDUCTORS
PERFORMANCE TESTING
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SOLID SOLUTIONS
SOLUTIONS
TESTING
WAVELENGTHS