Service life of GaInPAs/InP heterostructures

Journal Article · Tue Sep 01 04:00:00 EDT 1981 · Sov. J. Quant. Electron. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1070/QE1981v011n09ABEH008289· OSTI ID:5807038

Bezotosnyi, V V; Duraev, V P; Eliseev, P G; Nedelin, E T; Sverdlov, B N; Shepekina, G V; Shishkin, I N

Life tests were made on GaInPAs/InP heterostructures designed for use in injection lasers and diodes emitting in the 1.2--1.3 ..mu.. range. The step test method was used to investigate noncoherent emission from stripe diodes at temperatures 25--80/sup 0/ C. At the ambient medium temperature of 80/sup 0/ C the actual life exceeded 2000 h when the current density was 3--5 kA/cm/sup 2/. The activation energy of the temperature dependence of the degradation process was estimated to be approx.0.6 eV. Life tests were carried out also at room temperature on a cw heterolaser with a buried mesastripe structure on a p-type substrate, emitting at the wavelength of 1.25 ..mu... After 6000 h in an open atmosphere there was no significant change in the threshold current.

• Research Organization: P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow
• OSTI ID: 5807038
• Journal Information: Sov. J. Quant. Electron. (Engl. Transl.); (United States), Journal Name: Sov. J. Quant. Electron. (Engl. Transl.); (United States) Vol. 11:9; ISSN SJQEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MEDIUM TEMPERATURE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SERVICE LIFE
TEMPERATURE DEPENDENCE