Calculated temperature dependence of threshold current of GaAs-Al/sub x/Ga/sub 1-x/As double heterostructure lasers

Journal Article · Thu Jan 01 00:00:00 EST 1981 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328459· OSTI ID:6643454

Dutta, N K

The threshold current density J/sub th/(T) of the GaAs-Al/sub x/Ga/sub 1-x/As double heterostructure laser is calculated by including both drift and diffusion mechanism for carrier leakage. For x<0.25 (..delta..E/sub g/<0.3 eV), J/sub th/ increases rapidly with further decrease in the aluminum fraction x in the ternary layers, in general agreement with previous work. The ratio J/sub th/ (70 /sup 0/C)/J/sub th/ (22 /sup 0/C) also increases rapidly for x<0.25. The carrier concentration in the P ternary is an important quantity in determining both the temperature dependence of threshold as well as room-temperature threshold. In order to achieve a T/sub 0/>150 K for x=0.28, the P-ternary carrier concentration should be greater than 1.5 x 10/sup 17/ cm/sup -3/.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6643454
• Journal Information: J. Appl. Phys.; (United States), Vol. 52:1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
MATHEMATICAL MODELS
ALUMINIUM ARSENIDES
CARRIER DENSITY
CHARGE CARRIERS
CURRENT DENSITY
DIFFUSION
GALLIUM ARSENIDES
MEDIUM TEMPERATURE
QUANTITY RATIO
TEMPERATURE DEPENDENCE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)