Effects of KrF laser irradiation on Bi nanoclusters embedded in a-SiO{sub 2} by ion implantation
- Department of Applied Chemistry, Faculty of Science and Technology, Keio University, Yokohama 223-8522 (Japan)
- Department of Applied and Engineering Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Bismuth nanoclusters have been formed in optical grade silica glass (Corning 7940) by ion implantation which formed localized Bi:SiO{sub 2} composite in the near-surface region. Subsequent irradiation with 248 nm KrF excimer laser light modifies the distribution and chemical states of the implanted bismuth in the composite. Excimer laser irradiation causes not only photochemical reactions in the composite leaving a thin film of bismuth oxide on the surface, but also removal of the precipitated particles by both thermal and nonthermal desorption mechanisms from the surface. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 663670
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 73; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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