Laser induced diffusion of ion-implanted bismuth in fused silica
- Vanderbilt Univ., Nashville, TN (United States). Materials Science and Engineering
- Oak Ridge National Lab., TN (United States)
The near surface regions of optical grade fused silica discs (Spectrosil A) were modified by implantation with bismuth ions at 160 and 320 keV and at room temperature. The glasses implanted with a nominal dose of 6 {times} l0{sup 16} Bi{sup 2+} ions/cm{sup 2} were subsequently annealed with a 5 eV KrF pulsed excimer laser and by a furnace in oxygen atmosphere. Rutherford backscattering and optical absorption were measured before and after the anneals. Backscattering profiles after laser anneal showed shifts of the profiles toward the surface with decrease in retained dose. We attribute the diffusion of bismuth to Soret effect. Profiles of furnace annealed samples showed that the diffusion was both toward and away from the surface.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 69402
- Report Number(s):
- CONF-9407184--1; ON: DE95012869
- Country of Publication:
- United States
- Language:
- English
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