Optical bleaching of bismuth implanted silica glass: A threshold effect
- Vanderbilt Univ., Nashville, TN (United States). Dept. of Materials Science and Engineering
- Oak Ridge National Lab., TN (United States)
The near surface regions of high purity silica glass discs, Spectrosil A, were modified by implantation with bismuth ions at 160 key and room temperature. The glasses implanted with a nominal dose of 6[times]10[sup 16] Bi/cm[sup 2] at [approximately]5 [mu]A/cm[sup 2] were subsequently bleached with a 5.0 eV KrF pulsed excimer laser. The laser had an average pulse duration of [approximately]20 ns and repetition rate of 10 Hz. It was found that the bleaching was dependent upon the power density of the laser for a constant total integrated energy. Ion backscattering and optical absorption measurements were made before and after laser irradiation. Large changes in optical density and depth distribution of the implanted ions were observed at power densities of [ge]45 mJ/cm[sup 2]-pulse. Onset of threshold for bleaching of silica glass implanted with 6[times]10[sup 16] Bi/cm[sup 2] at 160 key and at room temperature is between 30 and 45 mJ/cm[sup 2]-pulse.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6647306
- Report Number(s):
- CONF-921101-106; ON: DE93009716
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
070205 -- Radiation Sources-- Industrial Applications
Radiation Processing-- (1987-)
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BEAMS
BISMUTH IONS
BLEACHING
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL ANALYSIS
DEPTH
DIMENSIONS
DOSES
ELECTROMAGNETIC RADIATION
ENERGY RANGE
GLASS
ION BEAMS
ION IMPLANTATION
ION SCATTERING ANALYSIS
IONS
IRRADIATION
KEV RANGE
KEV RANGE 100-1000
LASER RADIATION
NONDESTRUCTIVE ANALYSIS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PULSED IRRADIATION
RADIATION DOSES
RADIATIONS
SILICON COMPOUNDS
SILICON OXIDES