Lapped substrate for enhanced backsurface reflectivity in a thermophotovoltaic energy conversion system
Patent Application
·
OSTI ID:663496
A method is described for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate having a thickness ({beta}) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer substrate is provided with a thermophotovoltaic device, a metallized grid and optionally an antireflective (AR) overcoating; and, the bottom surface (10 ft) of the semiconductor wafer substrate is provided with a highly reflecting coating which may comprise a metal coating or a combined dielectric/metal coating.
- Research Organization:
- KAPL Inc., Schenectady, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- Assignee:
- US Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- PATENTS-US-A8740517
- Application Number:
- ON: DE98007406; PAN: 8-740,517; TRN: AHC29818%%333
- OSTI ID:
- 663496
- Resource Relation:
- Other Information: PBD: 1996
- Country of Publication:
- United States
- Language:
- English
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