Ionizing radiation effects on various commercial NMOS microprocessors
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6633757
Recent results of ionizing radiation tests indicate that popular commercial NMOS microprocessors are very vulnerable to total ionizing dose. Samples of five device types from six manufacturers were dynamically exposed to /sup 60/Co irradiation. Failure thresholds as low as 1000 Rads (Si) were observed and the entire sample population was dead after exposure to 3000 Rads (Si). The predominant failure mode is the failure to respond to control commands and is caused by shifts in the threshold voltage. Experimental devices made with 700 A hardened gate oxide raised the failure threshold to 10/sup 4/ Rads (Si). Dynamic irradiation of microprocessor systems yielded failures consistent with the biased static irradiation results.
- Research Organization:
- Fairchild Camera and Instrument Corp., Mountain View, CA
- OSTI ID:
- 6633757
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-24:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
FAILURES
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
MOS TRANSISTORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
FAILURES
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
MOS TRANSISTORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS