Steady state gamma testing of a 4K NMOS dynamic RAM

Journal Article · Tue Jun 01 04:00:00 EDT 1976 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1976.4328456· OSTI ID:7334087

Coleman, D W; Temkin, B M

Samples of the Texas Instruments TMS4060JL, 4096 bit dynamic random-access memory (4K RAM) were tested in the ionizing environment of a /sup 137/Ce source. Irradiated in an active condition, the devices were observed to fail at 1 x 10/sup 3/ rads (Si). Twenty-four hours after irradiation, 4 of the 5 devices tested were again functional. The devices were not powered and were at room temperature during the 24 hour anneal period.

• Research Organization: General Dynamics Electronics Div., Orlando, FL
• OSTI ID: 7334087
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-23:3; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
FAILURES
GAMMA RADIATION
IONIZING RADIATIONS
MEMORY DEVICES
MOS TRANSISTORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SATELLITES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
TESTING
TRANSISTORS