Radiation-hard CMOS/SOS ALU

Conference · Thu Dec 01 00:00:00 EST 1977 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6633746

Kjar, R A; Martinez, M; Waskiewicz, A E

A radiation-hard CMOS/SOS technology has been used to fabricate a complex LSI circuit containing over 2200 transistors. The circuit is an eight bit wide arithmetic and logic unit (ALU) slice. This paper describes the results of electrical, temperature, and radiation tests on the ALU circuit. An instruction cycle-time of less than 240 ns was achieved for nominal operation at +11 V and 25/sup 0/C. This time increases to 300 ns at 125/sup 0/C. After irradiation to 10/sup 6/ rads (Si) under bias, operation was degraded only slightly. The 25/sup 0/C and 125/sup 0/C postradiation cycle times were within 320 and 360 ns, respectively. Radiation tolerance from part to part and lot to lot was excellent, thus demonstrating the applicability of radiation hard CMOS/SOS to LSI circuitry.

• Research Organization: Rockwell International Corp., Anaheim, CA
• OSTI ID: 6633746
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-24:6; Conference: Annual conference on nuclear and space radiation effects, Williamsburg, VA, USA, 12 Jul 1977
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
INTEGRATED CIRCUITS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
MOS TRANSISTORS
RADIATION HARDENING
ELECTRONIC CIRCUITS
HARDENING
MICROELECTRONIC CIRCUITS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
360206 - Ceramics
Cermets
& Refractories- Radiation Effects