Radiation test and simulation of CMOS/SOS/Si-gate ALU and ROM devices
This paper presents the results of transient radiation tests on a Carry-Look-Ahead Arithmetic Logic Unit (ALU), the computer simulation of the transient response of this ALU device, and a proposed transient radiation-hardened design for a Read Only Memory (ROM). Experimental results demonstrate the validity of simple SOS device predictions of failure levels for the more complex ALU devices. ALU samples were fabricated with four types of insulators; namely: Al/sub 2/O/sub 3/, ion-implanted SiO/sub 2/, dry SiO/sub 2/, and wet SiO/sub 2/. These devices were specially made to investigate total dose hardness and to check the transient hardness of the fabrication on a sapphire substrate. Circuit design and sizing rules to achieve transient hardness were not utilized. Devices were exposed to 10-MeV electron pulses of 20 and 100 ns in a static and an active mode, with inputs activated by six basic test patterns. Upset failure did not occur in the 20-ns pulse tests for all exposure conditions and dose rates up to and including the maximum rate of 1.3 x 10/sup 10/ rads (Si)/s. The 100-ns pulse tests indicate that the failure level is 3.5 x 10/sup 10/ rads (Si)/s, whereas the pass level is 2 x 10/sup 10/ rads (Si)/s. The worst-case exposure conditions are the static mode of operation with the chip outputs in a high state. In order to explain the test results, a simple circuit model of a limited part of the chip output circuit was drived for the static mode of operation and output high. Using the RCA Circuit Analysis Program (R-CAP), the ciruit was simulated using pulse and linear current sources for 100-ns pulse duration. Simulation results indicate that failure occurs when the photocurrents are 65 and 190 ..mu..A for the two types of sources. respectively. These correspond to normalized conductances of 2.3 x 10/sup -16/ mhos/mil-rad/s and 6.7 x 10/sup -16/ mhos/mil-rad/s.
- Research Organization:
- RCA Astro-Electronics Div., Princeton, NJ
- OSTI ID:
- 7256742
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Vol. NS-23:6; Conference: IEEE annual conference on nuclear and space radiation effects, San Diego, CA, USA, 27 Jul 1976
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
LOGIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR STORAGE DEVICES
DOSE RATES
ELECTRONS
FAILURES
SIMULATION
TESTING
ELECTRONIC CIRCUITS
ELEMENTARY PARTICLES
FERMIONS
HARDENING
LEPTONS
MEMORY DEVICES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems