Radiation-hardened performance-optimized I/sup 2/L LSI

Conference · Thu Dec 01 04:00:00 EST 1977 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6633682

Bahraman, A; Chang, S; Romeo, D; Schuegraf, K; Wong, T

Experimental data and theoretical calculations are presented on the effects of neutron irradiation on I/sup 2/L circuits. It is shown that neutron-induced degradation of I/sup 2/L gate performance can be theoretically predicted with reasonable accuracy. Operation of custom designed I/sup 2/L 32-bit serial shift registers to a neutron fluence level of 1 x 10/sup 14/ n/cm/sup 2/ is demonstrated. Shift register data are also given from total dose gamma and transient upset radiation experiments with thresholds exceeding 3 x 10/sup 6/ rads (Si) and 2 x 10/sup 9/ rads (Si)/s, respectively.

• Research Organization: Northrop Research and Technology Center, Hawthorne, CA
• OSTI ID: 6633682
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-24:6
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
OPTIMIZATION
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES