Thin film solar cell

Patent · Tue Feb 21 04:00:00 EST 1984

OSTI ID:6628010

Maruyama, E; Ishizaka, A; Katayama, Y; Matsubara, H; Murayama, Y; Shimada, T; Shintani, A; Shiraki, Y

A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 ..mu..m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element. The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.

• Assignee: Hitachi, Ltd. (Japan)
• Patent Number(s): US 4433202
• OSTI ID: 6628010
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CAPITALIZED COST
CHEMICAL COMPOSITION
COST
CRYSTAL STRUCTURE
CRYSTALS
DESIGN
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRODES
ELECTRONS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
FIBERS
FILMS
GRAIN BOUNDARIES
GRAIN SIZE
LEPTONS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POLYCRYSTALS
SILICON SOLAR CELLS
SIZE
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
THIN FILMS
VALENCE