Large grain thin film polycrystalline p-InP/n-CdS solar cell

Patent · Tue Aug 22 04:00:00 EDT 1978

OSTI ID:6534920

Zanio, K W; Fraas, L M

A thin film solar cell is described having adjacent layers of P and N type polycrystalline semiconductor material which define a PN junction boundary. The improvement comprises a layer of n-type polycrystalline cadmium sulfide disposed on a chosen substrate material and having large grains with lateral grain boundaries on the order of about 20 micrometers or greater and a layer of polycrystalline P-type indium phosphide disposed on said layer of polycrystalline cadmium sulfide and having a thickness on the order of between 1.0 and 4.0 micrometers and further having large replicated grain boundaries with lateral dimensions and spacings approximately the same as the lateral dimensions and spacings of said large grains of cadmium sulfide whereby the lateral grain dimensions in said cadmium sulfide and indium phosphide layers are maximized while the quantity of indium in said solar cell is minimized.

• Assignee: Hughes Aircraft Co.
• Patent Number(s): US 4108684
• OSTI ID: 6534920
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
CADMIUM COMPOUNDS
CADMIUM SULFIDE SOLAR CELLS
CADMIUM SULFIDES
CHALCOGENIDES
COATINGS
COST
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
FABRICATION
FILMS
GLASS
GRAIN BOUNDARIES
GRAIN SIZE
INDIUM PHOSPHIDE SOLAR CELLS
INORGANIC PHOSPHORS
JUNCTIONS
MICROSTRUCTURE
P-N JUNCTIONS
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLATING
POLYCRYSTALS
RECRYSTALLIZATION
SEMICONDUCTOR JUNCTIONS
SIZE
SOLAR CELLS
SPUTTERING
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
VAPOR PLATING