Reducing grain-boundary effects in polycrystalline silicon solar cells

Journal Article · Mon Nov 15 04:00:00 EST 1976 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.88898· OSTI ID:7154328

Chu, T L

Solar-cell structures were prepared by depositing successively p- and n/sup +/-type silicon layers on low-resistivity p-type polycrystalline silicon substrates. The characteristics of the solar cells are limited predominately by the grain boundaries in the deposited p layer. The effects of grain boundaries can be reduced by increasing the dopant concentration in the p layer, and solar cells of lower series resistance and higher conversion efficiency have been obtained. (AIP)

• Research Organization: Southern Methodist University, Dallas, Texas 75275
• OSTI ID: 7154328
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CONVERSION
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
EFFICIENCY
ELEMENTS
ENERGY CONVERSION
FABRICATION
GRAIN BOUNDARIES
LAYERS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR ENERGY CONVERSION